IXGH32N60AU1

更新时间： 2024-11-05 22:41:07

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
2页	48K
描述
HiPerFAST IGBT with Diode Combi Pack

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中文翻译

获取价格

数据手册
替代型号

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IXGH32N60AU1 数据手册

IXGH 32N60AU1

IXGH 32N60AU1S

V_CES= 600 V

HiPerFAST^TMIGBT

I_C25

= 60 A

with Diode

V_CE(sat)= 2.9V

Combi Pack

t_fi

= 125 ns

TO-247 SMD

(32N60AU1S)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

600

C (TAB)

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-247 AD

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

C (TAB)

T_C= 25°C, 1 ms

120

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 33 Ω

Clamped inductive load, L = 100 µH

I_CM= 64

@ 0.8 V_CES

G = Gate

E = Emitter

C = Collector

TAB = Collector

P_C

T_C= 25°C

200

T_J

-55 ... +150

150

°C

Features

^●International standard packages

JEDEC TO-247 SMD surface

mountable and JEDEC TO-247 AD

^●High frequency IGBT and antiparallel

FRED in one package

T_JM

T_stg

-55 ... +150

Maximum Lead and Tab temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

^●High current handling capability

^●2nd generation HDMOS^TMprocess

^●MOS Gate turn-on

M_d

Mounting torque, TO-247 AD

1.13/10 Nm/lb.in.

Weight

TO-247 SMD

TO-247 AD

- drive simplicity

Applications

^●AC motor speed control

^●DC servo and robot drives

^●DC choppers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

^●Uninterruptible power supplies (UPS)

^●Switched-mode and resonant-mode

power supplies

min. typ. max.

BV_CES

V_GE(th)

I_C= 750µA, V_GE= 0 V

I_C= 250 µA, V_CE= V_GE

600

2.5

Advantages

5.5

^●Space savings (two devices in one

package)

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

500 µA

^●High power density

^●Suitable for surface mounting

^●Switching speed for high frequency

applications

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

2.9

^●Easy to mount with 1 screw, TO-247

(isolated mounting screw hole)

V_CE(sat)

I_C= I_C90, V_GE= 15 V

92794H (3/96)

IXYS Corporation

IXYS Semiconductor GmbH

3540 Bassett Street, Santa Clara, CA 95054

Phone: (408) 982-0700 Fax: 408-496-0670

Edisonstr. 15, D-68623 Lampertheim

Phone: +49-6206-503-0 Fax: +49-6206-503627

中文翻译

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IXGH32N60AU1 替代型号

型号	品牌	替代类型	描述	数据表
IXGH36N60A3D4	IXYS	类似代替	GenX3 600V IGBT with Diode
STGW30NC60WD	STMICROELECTRONICS	功能相似	N-CHANNEL 30A - 600V - TO-247 Ultra FAST Swit

与IXGH32N60AU1相关器件

型号	品牌	获取价格	描述	数据表
IXGH32N60AU1S	IXYS	获取价格	HiPerFAST IGBT with Diode Combi Pack
IXGH32N60B	IXYS	获取价格	HiPerFAST IGBT
IXGH32N60B_03	IXYS	获取价格	HiPerFAST IGBT
IXGH32N60BD1	IXYS	获取价格	HiPerFAST IGBTwith Diode
IXGH32N60BS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N60BU1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGH32N60BU1S	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N60C	IXYS	获取价格	HiPerFAST IGBT Lightspeed Series
IXGH32N60C	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH32N60CD1	IXYS	获取价格	HiPerFAST IGBT with Diode

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