生命周期: | Obsolete | 零件包装代码: | TO-247SMD |
包装说明: | FLANGE MOUNT, R-PSFM-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
其他特性: | FAST | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 60 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最大降落时间(tf): | 175 ns |
门极发射器阈值电压最大值: | 5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PSFM-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 200 W | 最大功率耗散 (Abs): | 200 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 400 ns |
标称接通时间 (ton): | 60 ns | VCEsat-Max: | 2.9 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGH32N60B | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH32N60B_03 | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH32N60BD1 | IXYS |
获取价格 |
HiPerFAST IGBTwith Diode | |
IXGH32N60BS | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD | |
IXGH32N60BU1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGH32N60BU1S | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD | |
IXGH32N60C | IXYS |
获取价格 |
HiPerFAST IGBT Lightspeed Series | |
IXGH32N60C | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGH32N60CD1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGH32N60CS | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD |