IXGH32N60B

更新时间： 2024-11-17 22:47:59

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
2页	38K
描述
HiPerFAST IGBT

阅读下载

中文翻译

获取价格

数据手册
替代型号

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IXGH32N60B 数据手册

HiPerFAST^TMIGBT

IXGH32N60B

V_CES

I_C25

= 600 V

= 60 A

V_CE(sat)= 2.5 V

t_fi

= 80 ns

Symbol

TestConditions

MaximumRatings

TO-247 AD

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_C= 25°C, 1 ms

120

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 33 W

Clamped inductive load, L = 100 mH

I_CM= 64

@ 0.8 V_CES

P_C

T_C= 25°C

200

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

• Internationalstandardpackage

JEDEC TO-247 AD

• Highcurrenthandlingcapability

• Newest generation HDMOS^TMprocess

• MOS Gate turn-on

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

M_d

Mountingtorque(M3)

1.13/10 Nm/lb.in.

TO-247 AD

Weight

- drive simplicity

Applications

• PFC circuits

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switched-modeandresonant-mode

powersupplies

BV_CES

V_GE(th)

I_C= 250 mA, V_GE= 0 V

I_C= 250 mA, V_CE= V_GE

600

2.5

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

200

Advantages

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

• High power density

• Very fast switching speeds for high

frequencyapplications

V_CE(sat)

I_C= I_C90, V_GE= 15 V

2.5

95566B(7/00)

IXYS reserves the right to change limits, test conditions, and dimensions.

1 - 2

中文翻译

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IXGH32N60B 替代型号

型号	品牌	替代类型	描述	数据表
IXGH36N60B3	IXYS	类似代替	GenX3 600V IGBT
STGW30NC60WD	STMICROELECTRONICS	功能相似	N-CHANNEL 30A - 600V - TO-247 Ultra FAST Swit
STGW20NC60VD	STMICROELECTRONICS	功能相似	N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT

与IXGH32N60B相关器件

型号	品牌	获取价格	描述	数据表
IXGH32N60B_03	IXYS	获取价格	HiPerFAST IGBT
IXGH32N60BD1	IXYS	获取价格	HiPerFAST IGBTwith Diode
IXGH32N60BS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N60BU1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGH32N60BU1S	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N60C	IXYS	获取价格	HiPerFAST IGBT Lightspeed Series
IXGH32N60C	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH32N60CD1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGH32N60CS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N90B2	IXYS	获取价格	HiPerFAST IGBT B2-Class High Speed IGBTs