Datasheet > IXGH32N60B_03

IXGH32N60B_03

更新时间： 2024-11-05 11:14:07

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
5页	129K
描述
HiPerFAST IGBT

阅读下载

中文翻译

获取价格

数据手册

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IXGH32N60B_03 数据手册

HiPerFAST^TMIGBT

V_CES

I_C25

= 600 V

= 60 A

IXGH 32N60B

IXGT 32N60B

IXGH 32N60BD1

IXGT 32N60BD1

V_CE(sat)= 2.3 V

t_fi(typ)

= 85 ns

(D1)

Symbol

TestConditions

Maximum Ratings

TO-268

(IXGT)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

(TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-247 AD

(IXGH)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

120

(TAB)

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 22 Ω

Clamped inductive load

I_CM= 64

@ 0.8 V_CES

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

P_C

T_C= 25°C

200

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

•Internationalstandardpackages

•HighfrequencyIGBTandantiparallel

FRED in one package

-55 ... +150

M_d

Mounting torque (M3) TO-247AD

1.13/10 Nm/lb.in.

•Highcurrenthandlingcapability

•HiPerFAST^TMHDMOS^TMprocess

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

•MOS Gate turn-on

-drivesimplicity

Weight

TO-247AD

TO-268

Applications

•Uninterruptible power supplies (UPS)

•Switched-modeandresonant-mode

power supplies

•AC motor speed control

•DC servo and robot drives

•DC choppers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Advantages

BV_CES

V_GE(th)

I_C= 250 µA, V_GE= 0 V

I_C= 250 µA, V_CE= V_GE

600

2.5

•Space savings (two devices in one

package)

5.0

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 150°C

200 µA

•High power density

•Suitableforsurfacemounting

32N60B

32N60BD1

•Verylowswitchinglossesforhigh

frequencyapplications

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

2.3

•Easy to mount with 1 screw,TO-247

(insulated mountingscrewhole)

V_CE(sat)

I_C= I_C90, V_GE= 15 V

DS98749C(02/03)

12 3 4 5

中文翻译

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与IXGH32N60B_03相关器件

型号	品牌	获取价格	描述	数据表
IXGH32N60BD1	IXYS	获取价格	HiPerFAST IGBTwith Diode
IXGH32N60BS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N60BU1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGH32N60BU1S	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N60C	IXYS	获取价格	HiPerFAST IGBT Lightspeed Series
IXGH32N60C	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH32N60CD1	IXYS	获取价格	HiPerFAST IGBT with Diode
IXGH32N60CS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 60A I(C) \| TO-247SMD
IXGH32N90B2	IXYS	获取价格	HiPerFAST IGBT B2-Class High Speed IGBTs
IXGH32N90B2	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30