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IXFT100N30X3HV PDF预览

IXFT100N30X3HV

更新时间: 2024-11-05 21:19:43
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 259K
描述
Power Field-Effect Transistor,

IXFT100N30X3HV 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:8.33Base Number Matches:1

IXFT100N30X3HV 数据手册

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Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 100A  
RDS(on) 13.5m  
IXFT100N30X3HV  
IXFH100N30X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV (IXFT)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
300  
300  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-247 (IXFH)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
100  
200  
A
A
TC = 25C, Pulse Width Limited by TJM  
G
D
IA  
TC = 25C  
TC = 25C  
50  
A
J
S
D (Tab)  
D = Drain  
EAS  
1.5  
G = Gate  
S = Source  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
Tab = Drain  
480  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Avalanche Rated  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
300  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
10 A  
750 A  
TJ = 125C  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
10.6  
13.5 m  
DS100862A(11/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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