Datasheet > IXFN130N30

IXFN130N30

更新时间： 2024-11-05 03:14:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	159K
描述
HiPerFET Power MOSFETs Single Die MOSFET

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中文翻译

获取价格

数据手册

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IXFN130N30 数据手册

HiPerFET^TM

Power MOSFETs

Single Die MOSFET

IXFN 130N30

V_DSS= 300 V

I_D25= 130 A

R_DS(on)= 22 mΩ

t_rr

< 250 ns

N-ChannelEnhancementMode

AvalancheRated, Highdv/dt, Lowt_rr

miniBLOC,SOT-227B(IXFN)

E153432

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

300

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

T_C= 25°C

130

100

I_L(RMS)

Terminal (current limit)

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

520

100

G = Gate

D = Drain

S = Source

E_AR

T_C= 25°C

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

E_AS

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

P_D

T_C= 25°C

700

• Internationalstandardpackages

• miniBLOC, withAluminiumnitride

isolation

• Low R_{DS (on)}HDMOS^TMprocess

• Ruggedpolysilicongatecellstructure

• UnclampedInductiveSwitching(UIS)

rated

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

V_ISOL

50/60 Hz, RMS

_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

M_d

Mounting torque

Terminal connection torque

1.5/13 Nm/lb.in.

• Lowpackageinductance

• FastintrinsicRectifier

Weight

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

• DC-DC converters

• Batterychargers

• Switched-modeandresonant-mode

power supplies

• DC choppers

• Temperatureandlightingcontrols

min. typ. max.

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

300

V_GH(th)

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

100 µA

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t ≤ 300 µs,

duty cycle d ≤ 2 %

22 mΩ

• Easy to mount

• Space savings

• High power density

DS98531F(01/03)

12 3 4

中文翻译

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