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IXFN140N25T PDF预览

IXFN140N25T

更新时间: 2024-09-28 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
6页 148K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXFN140N25T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.46

IXFN140N25T 数据手册

 浏览型号IXFN140N25T的Datasheet PDF文件第2页浏览型号IXFN140N25T的Datasheet PDF文件第3页浏览型号IXFN140N25T的Datasheet PDF文件第4页浏览型号IXFN140N25T的Datasheet PDF文件第5页浏览型号IXFN140N25T的Datasheet PDF文件第6页 
Advance Technical Information  
GigaMOSTM HiperFETTM  
Power MOSFET  
VDSS = 250V  
ID25 = 120A  
RDS(on) 17mΩ  
IXFN140N25T  
trr  
200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
miniBLOC  
E153432  
Fast Intrinsic Diode  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
250  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
120  
400  
A
A
G = Gate  
S = Source  
D = Drain  
IA  
TC = 25°C  
TC = 25°C  
40  
3
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
EAS  
PD  
TC = 25°C  
690  
20  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
z High Current Handling  
Capability  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Fast Intrinsic Diode  
z Low RDS(ON)  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z Avalanche Rated  
Weight  
30  
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
250  
2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 4mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z DC-DC Converters  
z Battery Chargers  
5.0  
z Switch-Mode and Resonant-Mode  
Power Supplies  
±200 nA  
IDSS  
50 μA  
3 mA  
z DC Choppers  
z AC Motor Drives  
TJ = 125°C  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
17 mΩ  
DS100268(05/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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