Datasheet > IXBF20N360

IXBF20N360

更新时间： 2024-09-16 21:15:39

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
6页	229K
描述
Insulated Gate Bipolar Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXBF20N360 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.49	Base Number Matches：	1

IXBF20N360 数据手册

Preliminary Technical Information

High Voltage,

V_CES= 3600V

I_C110= 18A

V_CE(sat) 3.4V

IXBF20N360

High Frequency,

BiMOSFET^TMMonolithic

Bipolar MOS Transistor

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

3600

V_CGR

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

Isolated Tab

I_C25

I_C110

I_CM

T_C= 25°C

1 = Gate

2 = Emitter

5 = Collector

T_C= 110°C

T_C= 25°C, 1ms

220

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 10

Clamped Inductive Load

= 160

V_CE^C_S^M 1500

Features

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 52, V_CE=1500V, Non-Repetitive

μs

^Silicon Chip on Direct-Copper Bond

(DCB) Substrate

P_C

T_C= 25°C

230

^Isolated Mounting Surface

^4000V~ Electrical Isolation

T_J

-55 ... +150

150

°C

T_JM

T_stg



High Blocking Voltage

-55 ... +150

^High Frequency Operation

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Advantages

F_C

Mounting Force with Clip

20..120 / 4.5..27

N/lb

V_ISOL

Weight

50/60Hz, 5 Seconds

4000

^Low Gate Drive Requirement

^High Power Density

Applications

Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

3600

3.0

Typ.

Max.

^Switch-Mode and Resonant-Mode

Power Supplies

BV_CES

V_GE(th)

I_CES

I_C

= 250μA, V_GE= 0V

^Uninterruptible Power Supplies

(UPS)

I_C= 250μA, V_CE= V_GE

5.0

V_CE= 3000V, V_GE= 0V

25 μA

μA

^Laser Generators

^Capacitor Discharge Circuits

^AC Switches

Note 2, T_J= 125°C

125

I_GES

V_CE= 0V, V_GE= ± 20V

I_C= 20A, V_GE= 15V, Note 1

T_J= 125°C

±200 nA

V_CE(SAT)

2.9

3.6

3.4

DS100567A(12/13)

12 3 4 5 6

中文翻译

下载PDF

与IXBF20N360相关器件

型号	品牌	获取价格	描述	数据表
IXBF28N300	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBF32N300	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBF40N140	IXYS	获取价格	High Voltage BIMOSFET
IXBF40N160	IXYS	获取价格	High Voltage BIMOSFET
IXBF40N160	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBF42N300	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBF42N300	IXYS	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS,
IXBF50N360	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBF55N300	IXYS	获取价格	Insulated Gate Bipolar Transistor, 73A I(C), 3000V V(BR)CES, N-Channel, ISOPLUS, I4PAK-3
IXBF55N300	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,