Datasheet > IXBH15N160

IXBH15N160

更新时间： 2024-11-04 22:12:15

品牌	Logo	应用领域
IXYS		晶体双极型晶体管高压
页数	文件大小	规格书
4页	65K
描述
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

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中文翻译

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数据手册

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IXBH15N160 数据手册

High Voltage BIMOSFET^TM

Monolithic Bipolar

IXBH 15N140 V_CES= 1400/1600V

IXBH 15N160 I_C25= 15 A

MOS Transistor

V_CE(sat)= 5.8 V typ.

N-Channel, Enhancement Mode

t_fi

= 40 ns

TO-247 AD

C (TAB)

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

Symbol

Conditions

Maximum Ratings

Features

15N140

15N160

• Internationalstandardpackage

JEDEC TO-247 AD

V_CES

V_CGR

T_J= 25°C to 150°C

1400

1600

• HighVoltageBIMOSFET^TM

T_J= 25°C to 150°C; R_GE= 1 MW

- replaceshighvoltageDarlingtons

and series connected MOSFETs

- lower effective R_DS(on)

V_GES

V_GEM

Continuous

Transient

±20

±30

• Monolithicconstruction

I_C25

I_C90

I_CM

T_C= 25°C,

- highblockingvoltagecapability

- very fast turn-off characteristics

• MOS Gate turn-on

T_C= 90°C

T_C= 25°C, 1 ms

- drive simplicity

• Reverse conducting capability

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 47 W V_CE= 0.8•V_CESI_CM= 18

Clamped inductive load, L = 100 mH

P_C

T_C= 25°C

150

Applications

T_J

-55 ... +150

150

°C

• Flyback converters

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switched-modeandresonant-mode

powersupplies

T_JM

T_stg

T_L

-55 ... +150

300

1.6 mm (0.063 in) from case for 10 s

Mounting torque

M_d

1.15/10 Nm/lb.in.

• CRTdeflection

• Lampballasts

Weight

Symbol

BV_CES

Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Advantages

min. typ. max.

• Easy to mount with 1 screw

(isolatedmountingscrewhole)

• Space savings

I_C= 1 mA, V_GE= 0 V

I_C= 1 mA, V_CE= V_GE

15N140

15N160

1400

1600

• High power density

V_GE(th)

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

100 mA

0.1

I_GES

V_CE= 0 V, V_GE= ±20 V

± 500 nA

V_CE(sat)

I_C= I_C90, V_GE= 15 V

5.8

7.7

7.0

T_J= 125°C

1 - 4

12 3 4

中文翻译

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