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IXBH16N360HV PDF预览

IXBH16N360HV

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管高压二极管
页数 文件大小 规格书
7页 295K
描述
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMOSFET大获成功。这种高压器件是并联的理想选择,因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

IXBH16N360HV 数据手册

 浏览型号IXBH16N360HV的Datasheet PDF文件第2页浏览型号IXBH16N360HV的Datasheet PDF文件第3页浏览型号IXBH16N360HV的Datasheet PDF文件第4页浏览型号IXBH16N360HV的Datasheet PDF文件第5页浏览型号IXBH16N360HV的Datasheet PDF文件第6页浏览型号IXBH16N360HV的Datasheet PDF文件第7页 
Advance Technical Information  
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3600V  
IC110 = 16A  
VCE(sat) 3.0V  
IXBT16N360HV  
IXBH16N360HV  
TO-268HV (IXBT)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
3600  
3600  
V
V
E
C (Tab)  
VCGR  
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-247HV (IXBH)  
IC25  
IC110  
ICM  
TC = 25°C  
48  
16  
72  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
G
E
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 25  
Clamped Inductive Load  
ICM = 60  
VCES 1500  
A
V
C (Tab)  
C
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C,  
RG = 82, VCE =1500V, Non-Repetitive  
G = Gate  
E = Emitter  
C
= Collector  
10  
μs  
Tab = Collector  
PC  
TC = 25°C  
270  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
High Voltage Packages  
High Blocking Voltage  
Md  
Mounting Torque (TO-247HV)  
1.13/10  
Nm/lb.in  
High Peak Current Capability  
Low Saturation Voltage  
Weight  
TO-268HV  
TO-247HV  
4
6
g
g
Advantages  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Low Gate Drive Requirement  
High Power Density  
Min.  
3600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
Applications  
10 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 16A, VGE = 15V, Note 1  
2.5  
3.1  
3.0  
V
V
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100886A(1/18)  

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