Datasheet > IXBH16N360HV

IXBH16N360HV

更新时间： 2024-09-16 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
7页	295K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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中文翻译

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数据手册

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IXBH16N360HV 数据手册

Advance Technical Information

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 3600V

I_C110= 16A

V_CE(sat) 3.0V

IXBT16N360HV

IXBH16N360HV

TO-268HV (IXBT)

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

3600

C (Tab)

V_CGR

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-247HV (IXBH)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 25

Clamped Inductive Load

I_CM= 60

V_CES 1500

C (Tab)

T_SC

(SCSOA)

V_GE= 15V, T_J= 125°C,

R_G= 82, V_CE=1500V, Non-Repetitive

G = Gate

E = Emitter

= Collector

μs

Tab = Collector

P_C

T_C= 25°C

270

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



High Voltage Packages

High Blocking Voltage



M_d

Mounting Torque (TO-247HV)

1.13/10

Nm/lb.in



High Peak Current Capability

Low Saturation Voltage

Weight

TO-268HV

TO-247HV

Advantages

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values



Low Gate Drive Requirement

High Power Density

Min.

3600

3.0

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

Applications

10 μA

500 μA

T_J= 125°C



Switch-Mode and Resonant-Mode

Power Supplies

Uninterruptible Power Supplies (UPS)

Laser Generators

Capacitor Discharge Circuits

AC Switches

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA



V_CE(sat)

I_C= 16A, V_GE= 15V, Note 1

2.5

3.1

3.0



DS100886A(1/18)

12 3 4 5 6 7

中文翻译

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