Datasheet > IXBF55N300

IXBF55N300

更新时间： 2024-11-18 21:13:27

品牌	Logo	应用领域
力特 - LITTELFUSE		栅功率控制晶体管
页数	文件大小	规格书
7页	211K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXBF55N300 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

IXBF55N300 数据手册

High Voltage, High Gain

BIMOSFET^TM

V_CES= 3000V

I_C110= 34A

V_CE(sat)≤ 3.2V

IXBF55N300

Monolithic Bipolar

MOS Transistor

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_C= 25°C to 150°C

3000

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 25

± 35

Isolated Tab

I_C25

I_C110

I_CM

T_C= 25°C

1 = Gate

2 = Emitter

5 = Collector

T_C= 110°C

T_C= 25°C, 1ms

600

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

Clamped Inductive Load

I_CM= 110

V_CE≤ 0.8 • V_CES

T_SC

(SCSOA)

V_GE= 15V, T_J= 125°C,

R_G= 10Ω, V_CE= 1250V, Non-Repetitive

Features

μs

P_C

T_C= 25°C

357

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

T_J

-55 ... +150

150

°C

T_JM

T_stg

4000V~ Electrical Isolation

-55 ... +150

High Blocking Voltage

High Peak Current Capability

Low Saturation Voltage

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

F_C

Mounting Force

20..120 / 4.5..27

Nm/lb.in.

Advantages

V_ISOL

Weight

50/60Hz, 1 Minute

4000

Low Gate Drive Requirement

High Power Density

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Applications

Min.

3000

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 1mA, V_GE= 0V

I_C= 4mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

Switch-Mode and Resonant-Mode

Power Supplies

Uninterruptible Power Supplies (UPS)

Laser Generators

Capacitor Discharge Circuits

5.0

50 μA

±200 nA

Note 2, T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 25V

AC Switches

V_CE(sat)

I_C= 55A, V_GE= 15V, Note 1

2.7

3.3

3.2

T_J= 125°C

DS100205B(11/11)

12 3 4 5 6 7

中文翻译

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