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IXBH12N300 PDF预览

IXBH12N300

更新时间: 2024-11-05 12:27:03
品牌 Logo 应用领域
IXYS 晶体双极型晶体管
页数 文件大小 规格书
5页 183K
描述
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

IXBH12N300 数据手册

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High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC110 = 12A  
VCE(sat) 3.2V  
IXBT12N300  
IXBH12N300  
TO-268 (IXBT)  
G
Symbol  
Test Conditions  
Maximum Ratings  
E
VCES  
VCGR  
TC = 25°C to 150°C  
3000  
3000  
V
V
C (Tab)  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-247 (IXBH)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
30  
12  
100  
A
A
A
G
C
C (Tab)  
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 30Ω  
ICM = 98  
1500  
A
V
E
Clamped Inductive Load  
PC  
TC = 25°C  
160  
W
G = Gate  
C
= Collector  
E = Emiiter  
Tab = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
z
High Blocking Voltage  
Weight  
TO-268  
TO-247  
4
6
g
g
z International Standard Packages  
z Anti-Parallel Diode  
z Low Conduction Losses  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Advantages  
Min.  
Typ.  
Max.  
z Low Gate Drive Requirement  
z High Power Density  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
3000  
3.0  
V
V
5.0  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
25 μA  
mA  
Applications:  
TJ = 125°C  
1
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
VCE(sat)  
IC = 12A, VGE = 15V, Note 1  
2.8  
3.5  
3.2  
V
V
z Uninterruptible Power Supplies (UPS)  
z Laser Generators  
TJ = 125°C  
z Capacitor Discharge Circuits  
z AC Switches  
© 2012 IXYS CORPORATION, All Rights Reserved  
DS100120A(10/12)  

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