Datasheet > IXBH12N300

IXBH12N300

更新时间： 2024-09-15 12:27:03

品牌	Logo	应用领域
IXYS		晶体双极型晶体管
页数	文件大小	规格书
5页	183K
描述
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

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中文翻译

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数据手册

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IXBH12N300 数据手册

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 3000V

I_C110= 12A

V_CE(sat)≤ 3.2V

IXBT12N300

IXBH12N300

TO-268 (IXBT)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

3000

C (Tab)

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-247 (IXBH)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

100

C (Tab)

SSOA

(RBSOA)

_GE= 15V, T_VJ= 125°C, R_G= 30Ω

I_CM= 98

1500

Clamped Inductive Load

P_C

T_C= 25°C

160

G = Gate

= Collector

E = Emiiter

Tab = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Features

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

High Blocking Voltage

Weight

TO-268

TO-247

^zInternational Standard Packages

^zAnti-Parallel Diode

^zLow Conduction Losses

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Advantages

Min.

Typ.

Max.

^zLow Gate Drive Requirement

^zHigh Power Density

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

3000

3.0

5.0

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

25 μA

Applications:

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^zSwitched-Mode and Resonant-Mode

Power Supplies

V_CE(sat)

I_C= 12A, V_GE= 15V, Note 1

2.8

3.5

3.2

^zUninterruptible Power Supplies (UPS)

^zLaser Generators

T_J= 125°C

^zCapacitor Discharge Circuits

^zAC Switches

DS100120A(10/12)

12 3 4 5

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