Datasheet > IXBH10N300HV

IXBH10N300HV

更新时间： 2024-11-05 20:02:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	268K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IXBH10N300HV 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

IXBH10N300HV 数据手册

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 3000V

I_C110= 10A

V_CE(sat) 2.8V

IXBA10N300HV

IXBH10N300HV

TO-263HV (IXBA)

Symbol

Test Conditions

Maximum Ratings

C (Tab)

V_CES

V_CGR

T_C= 25°C to 150°C

3000

TO-247HV (IXBH)

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

C (Tab)

SSOA

(RBSOA)

_GE= 15V, T_VJ= 125°C, R_G= 10

I_CM= 80

1500

Clamped Inductive Load

T_SC

(SCSOA)

V_GE= 15V, T_J= 125°C,

R_G= 82, V_CE=1500V, Non-Repetitive

G = Gate

E = Emitter

= Collector

μs

Tab = Collector

P_C

T_C= 25°C

180

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



High Blocking Voltage

^Anti-Parallel Diode

F_C

Mounting Force (TO-263HV)

Mounting Torque (TO-247HV)

10..65 / 22..14.6

1.13/10

N/lb

^Low Conduction Losses

M_d

Nm/lb.in

Advantages

Weight

TO-263HV

TO-247HV

2.5

6.0

^Low Gate Drive Requirement

^High Power Density

Applications

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

^Switch-Mode and Resonant-Mode

Power Supplies

Min.

3000

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

^Uninterruptible Power Supplies (UPS)

^Laser Generators

5.0

^Capacitor Discharge Circuits

^AC Switches

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

25 μA

500 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= 10A, V_GE= 15V, Note 1

2.2

2.7

2.8

DS100608B(9/15)

12 3 4 5 6 7

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