Datasheet > IXBF32N300

IXBF32N300

更新时间： 2024-11-05 21:16:47

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
6页	197K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IXBF32N300 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.27
Base Number Matches：	1

IXBF32N300 数据手册

Preliminary Technical Information

High Voltage, High Gain

V_CES= 3000V

I_C90= 22A

V_CE(sat)≤ 3.2V

IXBF32N300

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_C= 25°C to 150°C

3000

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

ISOLATED TAB

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

1 = Gate

2 = Emitter

5 = Collector

T_C= 25°C, 1ms

250

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 10Ω

Clamped Inductive Load

I_CM= 80

V_CES≤ 2400

P_C

T_C= 25°C

160

Features

T_J

-55 ... +150

150

°C

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

T_JM

T_stg

-55 ... +150

^zIsolated Mounting Surface

^z3000V Electrical Isolation

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

High Blocking Voltage

^zInternational Standard Package

^zLow Conduction Losses

F_C

Mounting Force

20..120 / 4.5..27

Nm/lb.in.

V_ISOL

Weight

50/60Hz, 1 Minute

3000

Advantages

^zLow Gate Drive Requirement

^zHigh Power Density

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Min.

3000

2.5

Typ.

Max.

Applications:

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= 0.8 • V_CES,V_GE= 0V

^zSwitched-Mode and Resonant-Mode

Power Supplies

5.0

50 μA

±100 nA

^zUninterruptible Power Supplies (UPS)

^zLaser Generators

T_J= 125°C

^zCapacitor Discharge Circuits

^zAC Switches

I_GES

V_CE= 0V, V_GE= ± 20V

V_CE(sat)

I_C= 32A, V_GE= 15V, Note 1

2.8

3.5

3.2

T_J= 125°C

DS100119(02/09)

12 3 4 5 6

中文翻译

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