Datasheet > IXBF42N300

IXBF42N300

更新时间： 2024-11-05 20:02:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	204K
描述
Insulated Gate Bipolar Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXBF42N300 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.28
Base Number Matches：	1

IXBF42N300 数据手册

Preliminary Technical Information

High Voltage, BiMOSFET^TM

Monolithic Bipolar MOS

Transistor

V_CES= 3000V

I_C110= 24A

V_CE(sat)≤ 3.0V

IXBF42N300

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_C= 25°C to 150°C

3000

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 25

± 35

Isolated Tab

I_C25

I_C110

I_CM

T_C= 25°C

1 = Gate

2 = Emitter

5 = Collector

T_C= 110°C

T_C= 25°C, 1ms

380

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 20Ω

I_CM= 84

V_CE≤ 0.8 • V_CES

μs

Clamped Inductive Load

T_SC

(SCSOA)

V_GE= 15V, T_J= 125°C,

R_G= 82Ω, V_CE=1500V, Non-Repetitive

Features

P_C

T_C= 25°C

240

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

T_J

-55 ... +150

150

°C

T_JM

T_stg

3000V~ Electrical Isolation

-55 ... +150

High Blocking Voltage

High Peak Current Capability

Low Saturation Voltage

FBSOA Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

F_C

Mounting Force

20..120 / 4.5..27

Nm/lb.in.

SCSOA Rated

V_ISOL

Weight

50/60Hz, 1 Minute

3000

Advantages

Low Gate Drive Requirement

High Power Density

Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

3000

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 1mA, V_GE= 0V

Applications

I_C= 1mA, V_CE= V_GE

V_CE= 0.8 • V_CES, V_GE= 0V

5.0

Laser Generators

Capacitor Discharge Circuits

AC Switches

Protection Circuits

50 μA

μA

Note 2, T_J= 125°C

250

I_GES

V_CE= 0V, V_GE= ± 25V

±200 nA

V_CE(sat)

I_C= 42A, V_GE= 15V, Note 1

2.5

3.1

3.0

T_J= 125°C

DS100325A(06/11)

12 3 4 5 6 7

中文翻译

下载PDF

与IXBF42N300相关器件

型号	品牌	获取价格	描述	数据表
IXBF50N360	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBF55N300	IXYS	获取价格	Insulated Gate Bipolar Transistor, 73A I(C), 3000V V(BR)CES, N-Channel, ISOPLUS, I4PAK-3
IXBF55N300	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBF9N140	IXYS	获取价格	High Voltage BIMOSFET
IXBF9N140G	IXYS	获取价格	Insulated Gate Bipolar Transistor, 7A I(C), 1400V V(BR)CES, N-Channel, ISOPLUS, I4PAC-3
IXBF9N160	IXYS	获取价格	High Voltage BIMOSFET
IXBF9N160G	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBH10N170	IXYS	获取价格	High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
IXBH10N170	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBH10N300HV	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,