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IXBF40N160 PDF预览

IXBF40N160

更新时间: 2024-11-05 03:14:47
品牌 Logo 应用领域
IXYS 晶体晶体管开关功率控制双极性晶体管高压
页数 文件大小 规格书
4页 99K
描述
High Voltage BIMOSFET

IXBF40N160 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:ISOPLUS
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliant风险等级:4.41
Is Samacsys:N其他特性:HIGH RELIABILITY, FAST SWITCHING
外壳连接:ISOLATED最大集电极电流 (IC):28 A
集电极-发射极最大电压:1600 V配置:SINGLE
门极发射器阈值电压最大值:8 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):340 ns标称接通时间 (ton):260 ns
Base Number Matches:1

IXBF40N160 数据手册

 浏览型号IXBF40N160的Datasheet PDF文件第2页浏览型号IXBF40N160的Datasheet PDF文件第3页浏览型号IXBF40N160的Datasheet PDF文件第4页 
AdvancedTechnicalInformation  
IC25  
= 28 A  
HighVoltage  
IXBF 40N140  
IXBF 40N160  
BIMOSFETTM  
in High Voltage  
VCES = 1400/1600 V  
VCE(sat) = 6.2 V  
tf  
ISOPLUSi4-PACTM  
= 40 ns  
Monolithic Bipolar MOS Transistor  
1
5
Features  
IGBT  
• HighVoltageBIMOSFETTM  
- substitute for high voltage MOSFETs  
with significantly lower voltage drop  
- fast switching for high frequency  
operation  
Symbol  
VCES  
Conditions  
MaximumRatings  
TVJ = 25°C to 150°C  
IXBF40N140  
IXBF40N160  
1400  
1600  
V
V
±
VGES  
20  
V
- reverse conduction capability  
• ISOPLUS i4-PACTM  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
28  
16  
A
A
highvoltagepackage  
- isolated back surface  
15/0  
ICM  
VCEK  
VGE  
=
V; R = 22 W; TVJ = 125°C  
40  
0.8VCES  
A
RBSOA, ClampGed inductive load; L = 100 µH  
- enlarged creepage towards heatsink  
-enlargedcreepagebetweenhigh  
voltage pins  
-applicationfriendlypinout  
-highreliability  
Ptot  
TC = 25°C  
250  
W
- industry standard outline  
Symbol  
Conditions  
CharacteristicValues  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
Applications  
VCE(sat)  
IC = 20 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
6.2  
6.9  
7.1  
V
V
• switched mode power supplies  
• DC-DC converters  
• resonant converters  
• lampballasts  
• laser generators, x ray generators  
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4
8
V
VCE = 0.8VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.4 mA  
mA  
0.8  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
500 nA  
td(on)  
tr  
td(off)  
tf  
200  
60  
300  
40  
ns  
ns  
ns  
ns  
Inductive load, TVJ = 125°C  
VCE = 960 V; IC = 25 A  
15/0  
VGE  
=
V; RG = 22 W  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600V; VGE = 15 V; IC = 20 A  
3300  
130  
pF  
nC  
VF  
(reverse conduction); IF = 20A  
2.5  
V
RthJC  
0.5 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 4  

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