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IXBF42N300 PDF预览

IXBF42N300

更新时间: 2024-11-18 21:18:43
品牌 Logo 应用领域
IXYS
页数 文件大小 规格书
6页 203K
描述
Insulated Gate Bipolar Transistor, 60A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3

IXBF42N300 技术参数

生命周期:Transferred零件包装代码:ISOPLUS
包装说明:PLASTIC, ISOPLUS, I4PAK-3针数:3
Reach Compliance Code:unknown风险等级:8.5
外壳连接:ISOLATED最大集电极电流 (IC):60 A
集电极-发射极最大电压:3000 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:25 V
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):240 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):950 ns标称接通时间 (ton):652 ns
Base Number Matches:1

IXBF42N300 数据手册

 浏览型号IXBF42N300的Datasheet PDF文件第2页浏览型号IXBF42N300的Datasheet PDF文件第3页浏览型号IXBF42N300的Datasheet PDF文件第4页浏览型号IXBF42N300的Datasheet PDF文件第5页浏览型号IXBF42N300的Datasheet PDF文件第6页 
Preliminary Technical Information  
High Voltage, BiMOSFETTM  
Monolithic Bipolar MOS  
Transistor  
VCES = 3000V  
IC110 = 24A  
VCE(sat) 3.0V  
IXBF42N300  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
3000  
3000  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 25  
± 35  
V
V
1
2
Isolated Tab  
5
IC25  
IC110  
ICM  
TC = 25°C  
60  
24  
A
A
A
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 110°C  
TC = 25°C, 1ms  
380  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20Ω  
ICM = 84  
VCE 0.8 • VCES  
A
μs  
W
Clamped Inductive Load  
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C,  
RG = 82Ω, VCE =1500V, Non-Repetitive  
10  
Features  
z
PC  
TC = 25°C  
240  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
TJM  
Tstg  
3000V~ Electrical Isolation  
z
z
-55 ... +150  
High Blocking Voltage  
High Peak Current Capability  
Low Saturation Voltage  
FBSOA Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
z
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
SCSOA Rated  
VISOL  
Weight  
50/60Hz, 1 Minute  
3000  
5
V~  
g
Advantages  
z
Low Gate Drive Requirement  
High Power Density  
z
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
3000  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
V
V
Applications  
IC = 1mA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
5.0  
z
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
Protection Circuits  
50 μA  
μA  
z
Note 2, TJ = 125°C  
250  
z
z
IGES  
VCE = 0V, VGE = ± 25V  
±200 nA  
VCE(sat)  
IC = 42A, VGE = 15V, Note 1  
2.5  
3.1  
3.0  
V
V
TJ = 125°C  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100325A(06/11)  

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