Datasheet > IXBF40N160

IXBF40N160

更新时间： 2024-11-05 20:29:07

品牌	Logo	应用领域
力特 - LITTELFUSE		栅开关功率控制晶体管
页数	文件大小	规格书
5页	128K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IXBF40N160 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Is Samacsys：	N	Base Number Matches：	1

IXBF40N160 数据手册

IXBF 40N160

= 28 A

V_CES= 1600 V

V_CE(sat)= 6.2 V

I_C25

High Voltage

BIMOSFET^TM

in High Voltage ISOPLUS i4-PAC^TM

t_f

= 40 ns

Monolithic Bipolar MOS Transistor

Features

IGBT

• High Voltage BIMOSFET^TM

- substitute for high voltage MOSFETs

with significantly lower voltage drop

- fast switching for high frequency

operation

Symbol

Conditions

Maximum Ratings

V_CES

V_GES

T_VJ= 25°C to 150°C

1600

- reverse conduction capability

I_C25

I_C90

T_C= 25°C

T_C= 90°C

• ISOPLUS i4-PAC^TM

high voltage package

- isolated back surface

15/0

I_CM

V_CEK

V_GE

V; R = 22 Ω; T_VJ= 125°C

0.8V_CES

RBSOA, Clamp^Ged inductive load; L = 100 µH

- enlarged creepage towards heatsink

- enlarged creepage between high

voltage pins

P_tot

T_C= 25°C

250

- application friendly pinout

- high reliability

- industry standard outline

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

Applications

min.

typ. max.

• switched mode power supplies

• DC-DC converters

• resonant converters

• lamp ballasts

• laser generators, x ray generators

V_CE(sat)

I_C= 20 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

6.2

6.9

7.1

V_GE(th)

I_CES

I_C= 2 mA; V_GE= V_CE

V_CE= 0.8V_CES;V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.4 mA

0.8

I_GES

V_CE= 0 V; V_GE

20 V

500 nA

t_d(on)

t_r

t_d(off)

t_f

200

300

Inductive load, T_VJ= 125°C

V_CE= 960 V; I_C= 25 A

15/0

V; R_G= 22 Ω

V_GE

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 600V; V_GE= 15 V; I_C= 20 A

3300

130

V_F

(reverse conduction); I_F= 20A

2.5

R_thJC

0.5 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 4

12 3 4 5

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