Datasheet > IXBF28N300

IXBF28N300

更新时间： 2024-11-21 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
6页	222K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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中文翻译

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数据手册

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IXBF28N300 数据手册

Advance Technical Information

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 3000V

I_C90= 28A

V_CE(sat) 2.7V

IXBF28N300

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

3000

V_CGR

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

Isolated Tab

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

1 = Gate

2 = Emitter

5 = Collector

T_C= 25°C, 1ms

220

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 15

Clamped Inductive Load

I_CM= 220

V_CE 1500

T_SC

(SCSOA)

V_GE= 15V, T_J= 125°C,

R_G= 52, V_CE=1500V, Non-Repetitive

Features

μs

P_C

T_C= 25°C

216



Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

4000V~ Electrical Isolation

High Blocking Voltage

T_J

-55 ... +150

150

°C



T_JM

T_stg

-55 ... +150



High Peak Current Capability

Low Saturation Voltage

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

F_C

Mounting Force

20..120 / 4.5..27

N/lb.

Advantages

V_ISOL

Weight

50/60Hz, 5 Seconds

4000



Low Gate Drive Requirement

High Power Density



Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Applications

Min.

3000

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



Switch-Mode and Resonant-Mode

Power Supplies

Uninterruptible Power Supplies (UPS)

Laser Generators

Capacitor Discharge Circuits

5.0



35 μA

1.5 mA



Note 2, T_J= 125°C



I_GES

V_CE= 0V, V_GE= ± 20V

±200 nA



AC Switches

V_CE(sat)

I_C= 28A, V_GE= 15V, Note 1

2.3

2.8

2.7

T_J= 125°C

DS100601(03/14)

12 3 4 5 6

中文翻译

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