品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | 栅 | |
页数 | 文件大小 | 规格书 |
6页 | 233K | |
描述 | ||
Insulated Gate Bipolar Transistor, |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXBF16N360 | LITTELFUSE |
获取价格 |
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBF20N300 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, | |
IXBF20N300 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, | |
IXBF20N360 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBF20N360 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBF28N300 | LITTELFUSE |
获取价格 |
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBF32N300 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBF40N140 | IXYS |
获取价格 |
High Voltage BIMOSFET | |
IXBF40N160 | IXYS |
获取价格 |
High Voltage BIMOSFET | |
IXBF40N160 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, |