型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXBF20N300 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, | |
IXBF20N300 | IXYS |
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Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, | |
IXBF20N360 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXBF20N360 | IXYS |
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Insulated Gate Bipolar Transistor, | |
IXBF28N300 | LITTELFUSE |
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BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBF32N300 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXBF40N140 | IXYS |
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High Voltage BIMOSFET | |
IXBF40N160 | IXYS |
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High Voltage BIMOSFET | |
IXBF40N160 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXBF42N300 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, |