Datasheet > IXBF16N360

IXBF16N360

更新时间： 2024-11-07 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
7页	286K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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中文翻译

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数据手册

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IXBF16N360 数据手册

Advance Technical Information

High Voltage,

V_CES= 3600V

I_C90= 16A

V_CE(sat) 3.0V

IXBF16N360

High Frequency,

BiMOSFET^TMMonolithic

Bipolar MOS Transistor

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

3600

V_CGR

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

Isolated Tab

I_C25

I_C90

I_CM

T_C= 25°C

1 = Gate

2 = Emitter

5 = Collector

T_C= 90°C

T_C= 25°C, 1ms

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 25

Clamped Inductive Load

= 60

V_CES^C^M1500

Features

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 82, V_CE=1500V, Non-Repetitive

μs

^Silicon Chip on Direct-Copper Bond

(DCB) Substrate

P_C

T_C= 25°C

125

^Isolated Mounting Surface

^4000V~ Electrical Isolation

T_J

-55 ... +150

150

°C

T_JM

T_stg



High Blocking Voltage

-55 ... +150

^High Frequency Operation

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Advantages

F_C

Mounting Force with Clip

20..120 / 4.5..27

N/lb

V_ISOL

Weight

50/60Hz, 5 Seconds

4000

^Low Gate Drive Requirement

^High Power Density

Applications

Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

3600

3.0

Typ.

Max.

^Switch-Mode and Resonant-Mode

Power Supplies

BV_CES

V_GE(th)

I_CES

I_C

= 250μA, V_GE= 0V

^Uninterruptible Power Supplies

(UPS)

I_C= 250μA, V_CE= V_GE

5.0

V_CE= V_CES, V_GE= 0V

25 μA

^Laser Generators

^Capacitor Discharge Circuits

^AC Switches

Note 2, T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 20V

I_C= 16A, V_GE= 15V, Note 1

T_J= 125°C

±200 nA

V_CE(SAT)

2.5

3.1

3.0

DS100859A(10/17)

12 3 4 5 6 7

中文翻译

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