是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | HERMETIC SEALED, LCC-18 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 120 mJ | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.055 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CQCC-N18 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 18 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 20 W |
最大脉冲漏极电流 (IDM): | 48 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7F3704 | INFINEON |
获取价格 |
HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N |
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IRF7MS2907 | INFINEON |
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HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-254AA) |
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IRF7MS2907PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 75V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me |
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IRF7N1405 | INFINEON |
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HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1) |
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IRF7N1405_07 | INFINEON |
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HEXFET POWER MOSFET SURFACE MOUNT (SMD-1) |
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IRF7N1405SCV | INFINEON |
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55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TXV |
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IRF7N60 | SUNTAC |
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POWER MOSFET |
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IRF7N60FP | SUNTAC |
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POWER MOSFET |
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IRF7NA2907 | INFINEON |
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HEXFET POWER MOSFET SURFACE MOUNT (SMD-2) |
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IRF7NA2907PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me |
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