5秒后页面跳转
IRF7N1405 PDF预览

IRF7N1405

更新时间: 2024-01-17 12:46:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 140K
描述
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1)

IRF7N1405 技术参数

生命周期:Active包装说明:CHIP CARRIER, R-CBCC-N3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68雪崩能效等级(Eas):245 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):55 A
最大漏源导通电阻:0.0053 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):220 A表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7N1405 数据手册

 浏览型号IRF7N1405的Datasheet PDF文件第2页浏览型号IRF7N1405的Datasheet PDF文件第3页浏览型号IRF7N1405的Datasheet PDF文件第4页浏览型号IRF7N1405的Datasheet PDF文件第5页浏览型号IRF7N1405的Datasheet PDF文件第6页浏览型号IRF7N1405的Datasheet PDF文件第7页 
PD - 94643  
HEXFET® POWER MOSFET  
SURFACE MOUNT (SMD-1)  
IRF7N1405  
55V, N-CHANNEL  
Product Summary  
Part Number  
BV  
RDS(on)  
ID  
DSS  
IRF7N1405  
55V  
0.005355A*  
Seventh Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievethelowestpossibleon-resistance  
per silicon unit area. This benefit, combined with the  
fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
providesthedesignerwithanextremelyefficientdevice  
for use in a wide variety of applications.  
SMD-1  
Features:  
n
n
n
n
n
n
n
n
Low RDS(on)  
Avalanche Energy Ratings  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
These devices are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits.  
Surface Mount  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
55*  
55*  
D
D
GS  
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
220  
DM  
@ T = 25°C  
P
D
100  
W
W/°C  
V
C
Linear Derating Factor  
0.8  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
245  
mJ  
A
AS  
I
55  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
10  
mJ  
V/ns  
AR  
dv/dt  
1.8  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Package Mounting Surface Temp.  
Weight  
300 (for 5s)  
2.6 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/14/03  

与IRF7N1405相关器件

型号 品牌 描述 获取价格 数据表
IRF7N1405_07 INFINEON HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)

获取价格

IRF7N1405SCV INFINEON 55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TXV

获取价格

IRF7N60 SUNTAC POWER MOSFET

获取价格

IRF7N60FP SUNTAC POWER MOSFET

获取价格

IRF7NA2907 INFINEON HEXFET POWER MOSFET SURFACE MOUNT (SMD-2)

获取价格

IRF7NA2907PBF INFINEON Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me

获取价格