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IRF7401PBF PDF预览

IRF7401PBF

更新时间: 2024-11-19 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
9页 197K
描述
HEXFET㈢ Power MOSFET

IRF7401PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SO-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.57
Base Number Matches:1

IRF7401PBF 数据手册

 浏览型号IRF7401PBF的Datasheet PDF文件第2页浏览型号IRF7401PBF的Datasheet PDF文件第3页浏览型号IRF7401PBF的Datasheet PDF文件第4页浏览型号IRF7401PBF的Datasheet PDF文件第5页浏览型号IRF7401PBF的Datasheet PDF文件第6页浏览型号IRF7401PBF的Datasheet PDF文件第7页 
PD - 95724  
IRF7401PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l N-ChannelMosfet  
l Surface Mount  
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
l Fast Switching  
A
A
D
1
2
3
4
8
S
S
S
G
VDSS = 20V  
7
D
6
D
5
D
RDS(on) = 0.022Ω  
l Lead-Free  
Top View  
Description  
Fifth GenerationHEXFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve the  
lowest possible on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient device for use in a wide  
variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
Power dissipation of greater than 0.8W is possible in  
a typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
10 Sec. Pulsed Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current   
10  
8.7  
A
7.0  
35  
PD @TA = 25°C  
Power Dissipation  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
VGS  
Gate-to-Source Voltage  
± 12  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
5.0  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
–––  
50  
°C/W  
8/10/04  

IRF7401PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7401TRPBF INFINEON

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Generation V Technology
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Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)

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