Datasheet > IRF7403_04

IRF7403_04

更新时间： 2024-11-19 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	231K
描述
HEXFET Power MOSFET

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IRF7403_04 数据手册

PD - 95301

IRF7403PbF

HEXFET^®Power MOSFET

^lGeneration V Technology

l Ultra Low On-Resistance

l N-ChannelMosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 30V

_DS(on)= 0.022Ω

l Lead-Free

Top View

Description

Fifth GenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combinedwiththefastswitchingspeedandruggedizeddevicedesignthat

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in

an application with dramatically reduced board space. The package is designed

for vapor phase, infra red, or wave soldering techniques. Power dissipation of

greater than 0.8W is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

10 Sec. Pulsed Drain Current, V_GS

Continuous Drain Current, V_GS

Pulsed Drain Current

Max.

Units

10V9.7

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10V8.5

10V5.4

2.5

_D@T_A= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.02

±20

5.0

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

9/30/04

12 3 4 5 6 7...9

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与IRF7403_04相关器件

型号	品牌	获取价格	描述	数据表
IRF7403HR	INFINEON	获取价格	暂无描述
IRF7403PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7403TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Me
IRF7403TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
IRF7403TRPBF	INFINEON	获取价格	Generation V Technology
IRF7404	INFINEON	获取价格	HEXFET Power MOSFET
IRF7404	ADI	获取价格	Thermoelectric Cooler Controller
IRF7404PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7404PBF-1	INFINEON	获取价格	Industry-standard pinout SO-8 Package
IRF7404PBF-1_15	INFINEON	获取价格	Industry-standard pinout SO-8 Package