Datasheet > IRF7406TR

IRF7406TR

更新时间： 2024-06-19 09:35:32

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	414K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-6.7A;Vgs(th)(V):±20;漏源导通电阻:45mΩ@-10V

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IRF7406TR 数据手册

UMW

IRF7406

P-Channel 30 V (D-S) MOSFET

Description

The SOP-8 has been modified through a customized leadframe

for enhanced therma characteristics and multiple-die capability

making it ideal in a variety of power applications. With these

improvements multiple devices can be used in an application

with dramatically reduced board space.The package is desig-

ned for vapor phase,infra redor wave soldering techniques.

Power dissipation of greater than 0.8W is possible in a typical

PCB mount application.

Top View

Features

Generation VTechnology

Ultra Low On-Resistance

P-Channel Mosfet

Surface Mount

Available in Tape&Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

Absolute Maximum Ratings

Parameter

Max.

-6.7

-5.8

-3.7

-23

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ -10V

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

± 20

-5.0

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambient

Typ.

Max.

Units

°C/W

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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