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IRF7403TR PDF预览

IRF7403TR

更新时间: 2024-11-20 17:15:39
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
8页 434K
描述
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时):9.7A;Vgs(th)(V):±20;漏源导通电阻:22mΩ@10V;漏源导通电阻:35mΩ@4.5V

IRF7403TR 数据手册

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R
UMW  
IRF7403  
Features  
l
Generation VTechology  
Ultra Low On-Resistance N-  
ChannelMosfet  
Surface Mount  
Dynamic dv/dt Rating  
Fast Switching  
A
A
D
l
1
2
3
4
8
S
S
S
G
l
l
l
l
7
6
5
D
D
D
Lead-Free  
Top View  
Description  
The SOP-8 has been modified throuah a customized leadframe  
for enhanced thermal characteristics and multiple-die capability  
making it ideal in a variety of power applications. With these im-  
provements, multiple devices can be used in an application with  
dramatically reduced board space.The package is designed for  
vapor phase. infra red. or wave so derina techniaues.Power dis-  
sipation of qreater than 0.8W is possible in a typical PCB mount  
application.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
10V9.7  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
10 Sec. Pulsed Drain Current, VGS  
Continuous Drain Current, VGS  
Continuous Drain Current, VGS  
Pulsed Drain Current   
@
@
@
10V8.5  
A
10V5.4  
34  
2.5  
PD @TA = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
0.02  
±20  
5.0  
VGS  
Gate-to-Source Voltage  
dv/dt  
TJ, TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Maximum Junction-to-Ambient„  
Typ.  
–––  
Max.  
50  
Units  
°C/W  
RθJA  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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