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IRF7404PBF-1_15 PDF预览

IRF7404PBF-1_15

更新时间: 2024-11-07 01:19:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 240K
描述
Industry-standard pinout SO-8 Package

IRF7404PBF-1_15 数据手册

 浏览型号IRF7404PBF-1_15的Datasheet PDF文件第2页浏览型号IRF7404PBF-1_15的Datasheet PDF文件第3页浏览型号IRF7404PBF-1_15的Datasheet PDF文件第4页浏览型号IRF7404PBF-1_15的Datasheet PDF文件第5页浏览型号IRF7404PBF-1_15的Datasheet PDF文件第6页浏览型号IRF7404PBF-1_15的Datasheet PDF文件第7页 
IRF7404TRPbF-1  
HEXFET® Power MOSFET  
VDS  
-20  
0.04  
50  
V
Ω
A
D
1
2
3
4
8
S
S
RDS(on) max  
(@VGS = -4.5V)  
Qg  
7
D
nC  
A
6
S
G
D
ID  
5
D
-6.7  
(@TA = 25°C)  
Top View  
SO-8  
Features  
Industry-standard pinout SO-8 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Benefits  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Form  
Tape and Reel  
Base Part Number  
Package Type  
Orderable Part Number  
IRF7404TRPbF-1  
Quantity  
4000  
IRF7404PbF-1  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
-7.7  
-6.7  
-5.4  
-27  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
10 Sec. Pulsed Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
A
PD @TA = 25°C  
Power Dissipation  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
± 12  
-5.0  
VGS  
Gate-to-Source Voltage  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
–––  
50  
°C/W  
1
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Submit Datasheet Feedback  
October 16, 2014  

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