型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7404QPBF | INFINEON |
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HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = | |
IRF7404QTRPBF | INFINEON |
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Transistor | |
IRF7404TR | UMW |
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种类:P-Channel;漏源电压(Vdss):-55V;持续漏极电流(Id)(在25°C | |
IRF7404TRPBF | INFINEON |
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generation v technology | |
IRF7404TRPBF-1 | INFINEON |
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Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET, | |
IRF7406 | INFINEON |
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HEXFET POWER MOSFET | |
IRF7406GPBF | INFINEON |
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Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Me | |
IRF7406PBF | INFINEON |
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HEXFET㈢Power MOSFET | |
IRF7406PBF-1 | INFINEON |
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Power Field-Effect Transistor | |
IRF7406TR | INFINEON |
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Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Me |