Datasheet > IRF7404PBF-1_15

IRF7404PBF-1_15

更新时间： 2024-11-20 01:19:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	240K
描述
Industry-standard pinout SO-8 Package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7404PBF-1_15 数据手册

IRF7404TRPbF-1

HEXFET^®Power MOSFET

V_DS

-20

0.04

R_{DS(on) max}

(@V_GS= -4.5V)

Q_g

I_D

-6.7

(@T_A= 25°C)

Top View

SO-8

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tape and Reel

Base Part Number

Package Type

Orderable Part Number

IRF7404TRPbF-1

Quantity

4000

IRF7404PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Max.

-7.7

-6.7

-5.4

-27

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ -4.5V

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

± 12

-5.0

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

Submit Datasheet Feedback

October 16, 2014

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF7404PBF-1_15相关器件

型号	品牌	获取价格	描述	数据表
IRF7404QPBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = -20V , RDS(on) =
IRF7404QTRPBF	INFINEON	获取价格	Transistor
IRF7404TR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C
IRF7404TRPBF	INFINEON	获取价格	generation v technology
IRF7404TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET,
IRF7406	INFINEON	获取价格	HEXFET POWER MOSFET
IRF7406GPBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Me
IRF7406PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRF7406PBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF7406TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Me