Datasheet > IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

更新时间： 2024-09-14 14:53:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	232K
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Power MOSFET

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IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Low gate charge Q_gresults in cimple drive

requirement

D²PAK (TO-263)

I²PAK (TO-262)

Available

• Improved gate, avalanche, and dynamic dV/dt

ruggedness

Available

• Fully characterized capacitance and avalanche

voltage and current

• Effective C_ossspecified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

V_DS(V)

400

R_DS(on)(Ω)

V_GS= 10 V

0.55

Q_g(Max.) (nC)

9.9

APPLICATIONS

_gs(nC)

_gd(nC)

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

Configuration

Single

TYPICAL SMPS TOPOLOGIES

• Single transistor flyback Xfmr. reset

• Single transistor forward Xfmr. reset (both for US line

input only)

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF740AS-GE3

IRF740ASPbF

D²PAK (TO-263)

SiHF740ASTRL-GE3^a

IRF740ASTRLPbF^a

D²PAK (TO-263)

SiHF740ASTRR-GE3^a

IRF740ASTRRPbF^a

I²PAK (TO-262)

SiHF740AL-GE3

IRF740ALPbF

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

400

T_C= 25 °C

_C= 100 °C

Continuous Drain Current^e

V_GSat 10 V

I_D

6.3

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

1.0

630

W/°C

E_AS

I_AR

Repetiitive Avalanche Energy^a

E_AR

12.5

3.1

125

5.9

T_A= 25 °C

_C= 25 °C

Maximum Power Dissipation

P_D

Peak Diode Recovery dV/dt^{c, e}

dV/dt

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 12.6 mH, R_g= 25 Ω, I_AS= 10 A (see fig. 12)

c. I_SD≤ 10 A, dI/dt ≤ 330 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. Uses IRF740A, SiHF740A data and test conditions

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91052

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRF740AS, SiHF740AS, IRF740AL, SiHF740AL相关器件

型号	品牌	获取价格	描述	数据表
IRF740ASPBF	INFINEON	获取价格	SMPS MOSFET
IRF740ASPBF	VISHAY	获取价格	Power MOSFET
IRF740ASTRL	VISHAY	获取价格	Power MOSFET
IRF740ASTRLPBF	VISHAY	获取价格	Power MOSFET
IRF740ASTRR	VISHAY	获取价格	Power MOSFET
IRF740ASTRRPBF	VISHAY	获取价格	Power MOSFET
IRF740B	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRF740B	VISHAY	获取价格	D Series Power MOSFET
IRF740BJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF740BPBF	VISHAY	获取价格	暂无描述

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