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IRF740AS PDF预览

IRF740AS

更新时间: 2024-11-18 05:39:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 171K
描述
Power MOSFET

IRF740AS 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.01Is Samacsys:N
雪崩能效等级(Eas):630 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.55 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF740AS 数据手册

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IRF740AS, IRF740AL, SiHF740AS, SiHF740AL  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Low Gate Charge Qg Results in Simple Drive  
400  
Requirement  
Available  
R
DS(on) (Ω)  
VGS = 10 V  
0.55  
• Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
RoHS*  
Qg (Max.) (nC)  
36  
9.9  
COMPLIANT  
• Fully  
Characterized  
Capacitance  
and  
Q
Q
gs (nC)  
gd (nC)  
Avalanche Voltage and Current  
• Effective Coss specified (AN 1001)  
• Lead (Pb)-free Available  
16  
Configuration  
Single  
D
D2PAK (TO-263)  
I2PAK (TO-262)  
APPLICATIONS  
• Switch Mode Power Supply (SMPS)  
• Uninterruptible Power Supply  
• High speed Power Switching  
G
G
D
TYPICAL SMPS TOPOLOGIES  
• Single Transistor Flyback Xfmr. Reset  
S
• Single Transistor Forward Xfmr. Reset  
(Both for US Line Input Only)  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
IRF740ASPbF  
SiHF740AS-E3  
IRF740AS  
D2PAK (TO-263)  
D2PAK (TO-263)  
IRF740ASTRRPbFa  
SiHF740ASTR-E3a  
IRF740ASTRRa  
I2PAK (TO-262)  
IRF740ALPbF  
SiHF740AL-E3  
IRF740AL  
IRF740ASTRLPbFa  
SiHF740ASTL-E3a  
IRF740ASTRLa  
Lead (Pb)-free  
SnPb  
SiHF740AS  
SiHF740ASTLa  
SiHF740ASTRa  
SiHF740AL  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
400  
30  
V
T
C = 25 °C  
10  
Continuous Drain Currente  
VGS at 10 V  
ID  
A
TC =100°C  
6.3  
Pulsed Drain Currenta, e  
Linear Derating Factor  
Single Pulse Avalanche Energyb, e  
Avalanche Currenta  
IDM  
40  
1.0  
W/°C  
mJ  
A
EAS  
IAR  
630  
10  
Repetiitive Avalanche Energya  
EAR  
12.5  
3.1  
mJ  
T
A = 25 °C  
Maximum Power Dissipation  
PD  
W
V/ns  
°C  
TC = 25 °C  
125  
Peak Diode Recovery dV/dtc, e  
dV/dt  
5.9  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 12.6 mH, RG = 25 Ω, IAS = 10 A (see fig. 12).  
c. ISD 10 A, dI/dt 330 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. Uses IRF740A/SiHF740A data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91052  
S-Pending-Rev. A, 19-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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