Datasheet > IRF740HPBF

IRF740HPBF

更新时间： 2024-11-19 17:01:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	163K
描述
Power MOSFET

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中文翻译

获取价格

数据手册

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IRF740HPBF 数据手册

IRF740HPBF

Vishay Siliconix

www.vishay.com

Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_o(er)

TO-220AB

)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

N-Channel MOSFET

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

450

_DS(on)typ. () at 25 °C

V_GS= 10 V

0.550

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- Welding

Configuration

Single

- Induction heating

- Motor drives

- Battery chargers

- Solar (PV inverters)

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free and halogen-free

IRF740HPBF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

400

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

9.4

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

6.0

Pulsed drain current ^a

I_DM

Linear derating factor

Single pulse avalanche energy ^b

1.0

W/°C

E_AS

P_D

Maximum power dissipation

125

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

T_J, T_stg

-55 to +150

100

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

°C

0.6

Soldering recommendations (peak temperature) ^c

260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 120 V, starting T_J= 25 °C, L = 9.1 mH, R_g= 25 , I_AS= 3.5 A

c. 1.6 mm from case

d. I_SD I_D, di/dt = 100 A/μs, starting T_J= 25 °C

S24-0030-Rev. A, 15-Jan-2024

Document Number: 92519

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与IRF740HPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF740L	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740LC	VISHAY	获取价格	Power MOSFET
IRF740LC-002	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740LC-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740LC-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740LC-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740LC-005	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740LC-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740LC-007	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740LC-009	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met

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