IRF740BPBF

更新时间： 2024-10-30 13:08:47

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	136K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF740BPBF 数据手册

IRF740, SiHF740

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

400

Available

• Repetitive Avalanche Rated

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

0.55

RoHS*

Q_g(Max.) (nC)

9.0

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF740PbF

SiHF740-E3

IRF740

Lead (Pb)-free

SnPb

SiHF740

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

400

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

6.3

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

520

E_AR

125

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 9.1 mH, R_G= 25 Ω, I_AS= 10 A (see fig. 12).

c. I_SD≤ 10 A, dI/dt ≤ 120 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91054

S-81291-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF740BPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF740C	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740CHIP	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| CHIP
IRF740D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| TO-220AB
IRF740D1	MOTOROLA	获取价格	10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF740F	VISHAY	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF740F	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF740FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| TO-220VAR
IRF740FPBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF740FPBF	VISHAY	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF740FX	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

与IRF740BPBF相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF740BPBF

IRF740BPBF 数据手册

与IRF740BPBF相关器件

与IRF740BPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF740BPBF

IRF740BPBF 数据手册

与IRF740BPBF相关器件

与IRF740BPBF相关文章

您还可以找

您在本页遇到什么问题？