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IRF740LC PDF预览

IRF740LC

更新时间： 2024-11-18 12:26:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
9页 203K
描述
Power MOSFET

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中文翻译

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IRF740LC 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-220AB
包装说明：TO-220AB, 3 PIN针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.04Is Samacsys：N
雪崩能效等级（Eas）：520 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：400 V
最大漏极电流 (Abs) (ID)：10 A最大漏极电流 (ID)：10 A
最大漏源导通电阻：0.55 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：125 W最大脉冲漏极电流 (IDM)：32 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF740LC 数据手册

 浏览型号IRF740LC的Datasheet PDF文件第2页浏览型号IRF740LC的Datasheet PDF文件第3页浏览型号IRF740LC的Datasheet PDF文件第4页浏览型号IRF740LC的Datasheet PDF文件第5页浏览型号IRF740LC的Datasheet PDF文件第6页浏览型号IRF740LC的Datasheet PDF文件第7页 
IRF740LC, SiHF740LC  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Ultra Low Gate Charge  
PRODUCT SUMMARY  
VDS (V)  
400  
Available  
• Reduced Gate Drive Requirement  
RDS(on) (Ω)  
VGS = 10 V  
0.55  
• Enhanced 30 V VGS Rating  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
39  
10  
• Reduced Ciss, Coss, Crss  
Q
Q
gs (nC)  
gd (nC)  
• Extremely High Frequency Operation  
• Repetitive Avalanche Rated  
19  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
D
DESCRIPTION  
This new series of low charge Power MOSFETs achieve  
significantly lower gate charge over conventional MOSFETs.  
Utilizing the new LCDMOS technology, the device  
improvements are achieved without added product cost,  
allowing for reduced gate drive requirements and total  
system savings. In addition, reduced switching losses and  
improved efficiency are achievable in a variety of high  
frequency applications. Frequencies of a few MHz at high  
current are possible using the new Low Charge MOSFETs.  
These device improvements combined with the proven  
ruggedness and reliability that are characteristic of Power  
MOSFETs ofter the designer a new standard in power  
transistors for switching applications.  
TO-220AB  
G
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-220AB  
IRF740LCPbF  
SiHF740LC-E3  
IRF740LC  
Lead (Pb)-free  
SnPb  
SiHF740LC  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
400  
V
VGS  
30  
TC = 25 °C  
TC = 100 °C  
10  
Continuous Drain Current  
VGS at 10 V  
ID  
A
6.3  
Pulsed Drain Currenta  
IDM  
32  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
520  
10  
EAR  
13  
125  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
10  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12).  
c. ISD ≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91053  
S11-0507-Rev. B, 21-Mar-11  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

中文翻译

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IRF740LC 替代型号

型号 品牌 替代类型 描述 数据表
IRF740 STMICROELECTRONICS

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