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IRF740LC-007 PDF预览

IRF740LC-007

更新时间: 2024-11-18 14:26:47
品牌 Logo 应用领域
威世 - VISHAY 局域网晶体管
页数 文件大小 规格书
2页 68K
描述
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

IRF740LC-007 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.64
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:400 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.55 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IRF740LC-007 数据手册

 浏览型号IRF740LC-007的Datasheet PDF文件第2页 

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IRF740LC-015 INFINEON

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