IRF740S

更新时间： 2024-11-17 22:51:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管开关
页数	文件大小	规格书
8页	95K
描述
N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET

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IRF740S 数据手册

IRF740S

N - CHANNEL 400V - 0.48 Ω - 10 A - D PAK

PowerMESH MOSFET

TYPE

IRF740S

V_DSS

R_DS(on)

I_D

400 V

< 0.55 Ω

10 A

■

TYPICAL R_DS(on)= 0.48 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATECHARGE MINIMIZED

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

D²PAK

TO-263

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

(Suffix ”T4”)

OVERLAY

process. This technology matches

and improves the performances compared with

standardparts from various sources.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

400

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

V_DGR

V_GS

I_D

400

± 20

Drain Current (continuous) at T_c= 25 ^oC

I_D

Drain Current (continuous) at T_c= 100 C

6.3

I_DM(• )

P_tot

Drain Current (pulsed)

Total Dissipation at T_c= 25 C

125

Derating Factor

1.0

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

4.0

T_stg

Storage Temperature

-65 to 150

T_j

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) I_SD≤10 A, di/dt ≤120 Α/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/8

August 1998

12 3 4 5 6 7 8

中文翻译

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IRF740S 替代型号

型号	品牌	替代类型	描述	数据表
IRF740ASTRLPBF	VISHAY	功能相似	Power MOSFET

与IRF740S相关器件

型号	品牌	获取价格	描述	数据表
IRF740S, SiHF740S	VISHAY	获取价格	Power MOSFET
IRF740SPBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=0.5
IRF740ST4	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| TO-263AB
IRF740STRL	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740STRR	INFINEON	获取价格	暂无描述
IRF740STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740U	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740U2	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740W	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met