Datasheet > IRF740S, SiHF740S

IRF740S, SiHF740S

更新时间： 2024-11-06 14:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	193K
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Power MOSFET

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IRF740S, SiHF740S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

D²PAK (TO-263)

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

N-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

V_DS(V)

DESCRIPTION

400

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

_DS(on)(Ω)

V_GS= 10 V

0.55

Q_gmax. (nC)

9.0

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF740S-GE3

IRF740SPbF

D²PAK (TO-263)

SiHF740STRL-GE3 ^a

IRF740STRLPbF ^a

D²PAK (TO-263)

SiHF740STRR-GE3 ^a

IRF740STRRPbF ^a

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

400

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

6.3

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

1.0

W/°C

Linear Derating Factor (PCB mount) ^e

Single Pulse Avalanche Energy ^b

Avalanche Current ^a

0.025

520

E_AS

I_AR

Repetitive Avalanche Energy ^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB mount) ^e

Peak Diode Recovery dV/dt ^c

_C= 25 °C

125

3.1

P_D

V/ns

°C

T_A= 25 °C

dV/dt

4.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +150

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 9.1 mH, R_g= 25 Ω, I_AS= 10 A (see fig. 12)

c. I_SD≤ 10A, dI/dt ≤ 120 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91055

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF740S, SiHF740S相关器件

型号	品牌	获取价格	描述	数据表
IRF740SPBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=0.5
IRF740ST4	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| TO-263AB
IRF740STRL	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740STRR	INFINEON	获取价格	暂无描述
IRF740STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740U	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740U2	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740W	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740WC	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met

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