生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.02 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 400 V |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.55 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 125 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF740S, SiHF740S | VISHAY |
获取价格 |
Power MOSFET | |
IRF740SPBF | INFINEON |
获取价格 |
HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=0.5 | |
IRF740ST4 | STMICROELECTRONICS |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB | |
IRF740STRL | INFINEON |
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Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met | |
IRF740STRLPBF | INFINEON |
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Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met | |
IRF740STRR | INFINEON |
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暂无描述 | |
IRF740STRRPBF | INFINEON |
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Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met | |
IRF740U | MOTOROLA |
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Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met | |
IRF740U2 | MOTOROLA |
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Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met | |
IRF740W | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met |