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IRF740B PDF预览

IRF740B

更新时间: 2024-11-20 22:31:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 895K
描述
400V N-Channel MOSFET

IRF740B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:7.18
Is Samacsys:N雪崩能效等级(Eas):450 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.54 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):134 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF740B 数据手册

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November 2001  
IRF740B/IRFS740B  
400V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supplies and  
electronic lamp ballasts based on half bridge.  
10A, 400V, R  
= 0.54@V = 10 V  
DS(on) GS  
Low gate charge ( typical 41 nC)  
Low Crss ( typical 35 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
G
TO-220  
IRF Series  
TO-220F  
IRFS Series  
G
D S  
G D  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRF740B  
IRFS740B  
Units  
V
V
I
Drain-Source Voltage  
400  
DSS  
- Continuous (T = 25°C)  
Drain Current  
10  
6.3  
40  
10 *  
6.3 *  
40 *  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
450  
10  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
13.4  
5.5  
mJ  
V/ns  
W
AR  
dv/dt  
P
Power Dissipation (T = 25°C)  
134  
44  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.08  
0.35  
W/°C  
°C  
T , T  
-55 to +150  
300  
J
STG  
Maximum lead temperature for soldering purposes,  
T
°C  
L
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
IRF740B  
IRFS740B  
2.86  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
0.93  
0.5  
θJC  
--  
θCS  
Thermal Resistance, Junction-to-Ambient  
62.5  
62.5  
θJA  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  

IRF740B 替代型号

型号 品牌 替代类型 描述 数据表
IRF740PBF VISHAY

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TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-220AB
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Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
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Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF740FI ETC

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TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | TO-220VAR
IRF740FPBF INFINEON

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Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S