Datasheet > IRF740B

IRF740B

更新时间： 2024-10-31 14:54:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	143K
描述
D Series Power MOSFET

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IRF740B 数据手册

IRF740B

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

FEATURES

PRODUCT SUMMARY

• Optimal design

450

V_DS(V) at T_Jmax.

_DS(on)max. () at 25 °C

Q_gmax. (nC)

- Low area specific on-resistance

- Low input capacitance (C_iss

V_GS= 10 V

0.6

)

Available

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

_gs(nC)

_gd(nC)

Configuration

Single

- Simple gate drive circuitry

- Low figure-of-merit (FOM): R_onx Q_g

- Fast switching

TO-220AB

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.



N-Channel MOSFET

APPLICATIONS

• Consumer electronics

- Displays (LCD or plasma TV)

• Server and telecom power supplies

- SMPS

• Industrial

- Welding

- Induction heating

- Motor drives

• Battery chargers

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF740BPbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

V_DS

400

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy ^b

1.2

W/°C

E_AS

P_D

194

Maximum Power Dissipation

147

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

0.6

Soldering Recommendations (Peak temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.3 mH, R_g= 25 , I_AS= 13 A.

c. 1.6 mm from case.

d. I_SD I_D, starting T_J= 25 °C.

S16-0799-Rev. B, 02-May-16

Document Number: 91519

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与IRF740B相关器件

型号	品牌	获取价格	描述	数据表
IRF740BJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF740BPBF	VISHAY	获取价格	暂无描述
IRF740C	MOTOROLA	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Met
IRF740CHIP	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| CHIP
IRF740D	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| TO-220AB
IRF740D1	MOTOROLA	获取价格	10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF740F	VISHAY	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF740F	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF740FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| TO-220VAR
IRF740FPBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

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