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IRF7406TRPBF-1 PDF预览

IRF7406TRPBF-1

更新时间: 2024-10-30 20:04:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 228K
描述
Power Field-Effect Transistor

IRF7406TRPBF-1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.16配置:Single
最大漏极电流 (Abs) (ID):5.8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
湿度敏感等级:1最高工作温度:150 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W子类别:Other Transistors
表面贴装:YES处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IRF7406TRPBF-1 数据手册

 浏览型号IRF7406TRPBF-1的Datasheet PDF文件第2页浏览型号IRF7406TRPBF-1的Datasheet PDF文件第3页浏览型号IRF7406TRPBF-1的Datasheet PDF文件第4页浏览型号IRF7406TRPBF-1的Datasheet PDF文件第5页浏览型号IRF7406TRPBF-1的Datasheet PDF文件第6页浏览型号IRF7406TRPBF-1的Datasheet PDF文件第7页 
IRF7406PbF-1  
HEXFET® Power MOSFET  
VDS  
RDS(on) max  
(@VGS = -10V)  
Qg (max)  
-30  
0.045  
59  
V
Ω
A
1
2
3
4
8
S
S
D
7
D
nC  
A
6
S
G
D
ID  
5
D
-5.8  
(@TA = 25°C)  
SO-8  
Top View  
Features  
Industry-standard pinout SO-8 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Benefits  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Form  
Tube/Bulk  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
95  
4000  
IRF7406PbF-1  
IRF7406TRPbF-1  
IRF7406PbF-1  
SO-8  
Tape and Reel  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
10 Sec. Pulsed Drain Current, VGS @ -10V  
-6.7  
-5.8  
-3.7  
-23  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
A
PD @TA = 25°C  
Power Dissipation  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
± 20  
-5.0  
VGS  
Gate-to-Source Voltage  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
V/ns  
-55 to + 150  
°C  
Thermal Resistance Ratings  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
–––  
50  
°C/W  
1
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Submit Datasheet Feedback  
November 18, 2013  

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