Datasheet > IRF7404TR

IRF7404TR

更新时间： 2024-05-27 20:45:26

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	392K
描述
种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C时）:-7.7A;Vgs(th)(V):±12;漏源导通电阻:40mΩ@-4.5V

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中文翻译

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IRF7404TR 数据手册

UMW

IRF7404

P-Channel MOSFET

Features

VDS (V)=-55V

20 m (VGS =-4.5V)

60 m (VGS =-2.7V)

RDS(ON)

l Generation V Technology

l Ultra Low On-Resistance

l Surface Mount

l Dynamic dv/dt Rating

l Fast Switching

Lead-Free

SOP-8

Description

The SOP-8 has been modified through a customi-

zed eadframe for enhanced thermal characteristics

and multiple-die capabilitv making it ideal in

varietyof powerapplications.Withthese improve-

ments.multiple devices can be used in an appli-

cation with dramatically reduced board space. The

package is desianed fon vapor phase. inra rea. or

wave so gerina technigues Power dissipation of

greater than 0.8W is possible in a typical PCB

mount application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ -4.5V

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-7.7

-6.7

-5.4

-27

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

± 12

-5.0

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambient

Typ.

Max.

Units

°C/W

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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