IRF7403HR

更新时间： 2024-11-19 12:59:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管光电二极管
页数	文件大小	规格书
9页	118K
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中文翻译

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数据手册

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IRF7403HR 数据手册

PD - 9.1245B

IRF7403

PRELIMINARY

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel Mosfet

V_DSS= 30V

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

_DS(on)= 0.022Ω

Top View

Description

Fifth GenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combinedwiththefastswitchingspeedandruggedizeddevicedesignthat

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in

an application with dramatically reduced board space. The package is designed

for vapor phase, infra red, or wave soldering techniques. Power dissipation of

greater than 0.8W is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.7

8.5

5.4

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

Gate-to-Source Voltage

±20

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

°C/W

8/25/97

12 3 4 5 6 7...9

中文翻译

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