IRF7404

更新时间： 2024-09-14 22:31:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	165K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF7404 数据手册

PD - 9.1246C

IRF7404

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel Mosfet

V_DSS= -20V

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

R_DS(on)= 0.040Ω

Top View

Description

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

S O -8

Absolute Maximum Ratings

Parameter

10 Sec. Pulsed Drain Current, V_GS@ -4.5V

Max.

-7.7

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-6.7

-5.4

-27

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

Gate-to-Source Voltage

± 12

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

°C/W

www.irf.com

3/10/99

12 3 4 5 6 7 8

中文翻译

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IRF7404 替代型号

型号	品牌	替代类型	描述	数据表
IRF7404TRPBF	INFINEON	类似代替	generation v technology
IRF7404PBF	INFINEON	类似代替	HEXFET Power MOSFET
BSO203SPHXUMA1	INFINEON	功能相似	Power Field-Effect Transistor, 5.7A I(D), 20V, 0.021ohm, 1-Element, P-Channel, Silicon, Me

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IRF7404QPBF	INFINEON	获取价格	HEXFET Power MOSFET ( VDSS = -20V , RDS(on) =
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IRF7404TRPBF	INFINEON	获取价格	generation v technology
IRF7404TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET,
IRF7406	INFINEON	获取价格	HEXFET POWER MOSFET
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