IRF7402PBF

更新时间： 2024-11-09 03:58:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	184K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF7402PBF 数据手册

PD - 95202

IRF7402PbF

HEXFET^®Power MOSFET

ꢁ Generation V Technology

ꢁ Ultra Low On-Resistance

ꢁ N-Channel MOSFET

ꢁ Very Small SOIC Package

ꢁ Low Profile (<1.1mm)

ꢁ Available in Tape & Reel

ꢁ Fast Switching

V_DSS= 20V

R_DS(on)= 0.035Ω

ꢁ Lead-Free

Description

Top View

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

siliconarea.Thisbenefit,combinedwiththefastswitching

speed and ruggedized device design that HEXFET

power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characterstics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared or wave soldering techniques.

Power dissipation of greater than 0.8 W is possible in a

typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

6.8

5.4

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current ꢂ

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

V_GS

Gate-to-Source Voltage

± 12

dv/dt

Peak Diode Recovery dv/dt ꢃ

Junction and Storage Temperature Range

5.0

V/ns

°C

T_J,T_STG

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient ꢀ

Max.

Units

°C/W

R_θJA

www.irf.com

9/30/04

12 3 4 5 6 7 8

中文翻译

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IRF7402PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF7402TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 6.8A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Me

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IRF7402TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.8A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Me
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IRF7402UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.8A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Me
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