IRF7403

更新时间： 2024-11-18 22:31:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管光电二极管
页数	文件大小	规格书
9页	118K
描述
Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF7403 数据手册

PD - 9.1245B

IRF7403

PRELIMINARY

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel Mosfet

V_DSS= 30V

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

_DS(on)= 0.022Ω

Top View

Description

Fifth GenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combinedwiththefastswitchingspeedandruggedizeddevicedesignthat

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in

an application with dramatically reduced board space. The package is designed

for vapor phase, infra red, or wave soldering techniques. Power dissipation of

greater than 0.8W is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.7

8.5

5.4

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

Gate-to-Source Voltage

±20

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

°C/W

8/25/97

12 3 4 5 6 7...9

中文翻译

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IRF7403 替代型号

型号	品牌	替代类型	描述	数据表
IRF7101TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
IRF7403TRPBF	INFINEON	类似代替	Generation V Technology
NTMD4N03R2G	ONSEMI	功能相似	Power MOSFET 4 A, 30 V, NâChannel SOâ8 Du

与IRF7403相关器件

型号	品牌	获取价格	描述	数据表
IRF7403_04	INFINEON	获取价格	HEXFET Power MOSFET
IRF7403HR	INFINEON	获取价格	暂无描述
IRF7403PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7403TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Me
IRF7403TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
IRF7403TRPBF	INFINEON	获取价格	Generation V Technology
IRF7404	INFINEON	获取价格	HEXFET Power MOSFET
IRF7404	ADI	获取价格	Thermoelectric Cooler Controller
IRF7404PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7404PBF-1	INFINEON	获取价格	Industry-standard pinout SO-8 Package