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NTMD4N03R2G PDF预览

NTMD4N03R2G

更新时间： 2024-01-18 13:42:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 126K
描述
Power MOSFET 4 A, 30 V, N−Channel SO−8 Dual

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中文翻译

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NTMD4N03R2G 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOT
包装说明：ROHS COMPLIANT, MINIATURE, CASE 751-07, SOIC-8针数：8
Reach Compliance Code：unknown风险等级：5.21
Is Samacsys：N雪崩能效等级（Eas）：80 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：4 A最大漏源导通电阻：0.06 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e3湿度敏感等级：NOT SPECIFIED
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：12 A认证状态：COMMERCIAL
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTMD4N03R2G 数据手册

 浏览型号NTMD4N03R2G的Datasheet PDF文件第2页浏览型号NTMD4N03R2G的Datasheet PDF文件第3页浏览型号NTMD4N03R2G的Datasheet PDF文件第4页浏览型号NTMD4N03R2G的Datasheet PDF文件第5页浏览型号NTMD4N03R2G的Datasheet PDF文件第6页浏览型号NTMD4N03R2G的Datasheet PDF文件第7页 
NTMD4N03, NVMD4N03  
Power MOSFET  
4 A, 30 V, N−Channel SO−8 Dual  
Features  
• Designed for use in low voltage, high speed switching applications  
• Ultra Low On−Resistance Provides  
http://onsemi.com  
Higher Efficiency and Extends Battery Life  
− R  
− R  
= 0.048 W, V = 10 V (Typ)  
DS(on)  
DS(on)  
GS  
= 0.065 W, V = 4.5 V (Typ)  
GS  
V
R
Typ  
I Max  
D
DSS  
DS(ON)  
• Miniature SO−8 Surface Mount Package − Saves Board Space  
• Diode is Characterized for Use in Bridge Circuits  
• Diode Exhibits High Speed, with Soft Recovery  
30 V  
48 mW @ V = 10 V  
4.0 A  
GS  
• NVMD Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable*  
N−Channel  
D
D
• These Devices are Pb−Free and are RoHS Compliant  
Applications  
G
8
G
• DC−DC Converters  
• Computers  
• Printers  
• Cellular and Cordless Phones  
• Disk Drives and Tape Drives  
S
S
MARKING DIAGRAM*  
AND PIN ASSIGNMENT  
D1 D1 D2 D2  
8
1
SOIC−8  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
SUFFIX NB  
CASE 751  
STYLE 11  
E4N03  
AYWW G  
G
Rating  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Drain Current  
V
DSS  
30  
V
V
V
GS  
"20  
1
S1 G1 S2 G2  
− Continuous @ T = 25°C  
− Single Pulse (tp ≤ 10 ms)  
I
4.0  
12  
Adc  
Apk  
A
D
I
DM  
E4N03 = Specific Device Code  
Total Power Dissipation  
P
D
2.0  
W
°C  
mJ  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
@ T = 25°C (Note 1)  
A
Operating and Storage  
Temperature Range  
T , T  
−55 to  
+150  
J
stg  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source  
E
AS  
80  
*For additional marking information, refer to  
Application Note AND8002/D.  
Avalanche Energy − Starting T = 25°C  
J
(V = 25 Vdc, V = 5.0 Vdc,  
DD  
GS  
Peak I = 4.45 Apk, L = 8 mH,  
L
R
G
= 25 W)  
ORDERING INFORMATION  
Thermal Resistance  
R
q
JA  
62.5  
260  
°C/W  
°C  
− Junction−to−Ambient (Note 1)  
†
Device  
Package  
SOIC−8  
(Pb−Free)  
Shipping  
2500 / Tape &  
Reel  
NTMD4N03R2G  
Maximum Lead Temperature for  
T
L
Soldering Purposes for 10 seconds  
NVMD4N03R2G*  
SOIC−8  
(Pb−Free)  
2500 / Tape &  
Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D  
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 4  
NTMD4N03R2/D  
 
12345678

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NTMD4N03R2G 替代型号

型号 品牌 替代类型 描述 数据表
NTMD6N02R2G ONSEMI

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 Power MOSFET

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