是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 0.73 | Is Samacsys: | N |
雪崩能效等级(Eas): | 80 mJ | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 4 A |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 12 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTMD6N02R2G | ONSEMI |
类似代替 |
Power MOSFET 6.0 Amps, 20 Volts | |
MMDF2N02ER2G | ONSEMI |
类似代替 |
Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual | |
NTMD6N03R2 | ONSEMI |
类似代替 |
Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTMD5836NL | ONSEMI |
获取价格 |
Power MOSFET 40 V, Dual N?Channel, SOIC?8 Optimized Gate Charge | |
NTMD5836NLR2G | ONSEMI |
获取价格 |
Power MOSFET 40 V, Dual N?Channel, SOIC?8 Optimized Gate Charge | |
NTMD5838NL | ONSEMI |
获取价格 |
Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Optimized Gate Charge | |
NTMD5838NLR2G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Optimized Gate Charge | |
NTMD6601NR2G | ONSEMI |
获取价格 |
Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 | |
NTMD6N02R2 | ONSEMI |
获取价格 |
Power MOSFET 6.0 Amps, 20 Volts | |
NTMD6N02R2/D | ETC |
获取价格 |
Power MOSFET 6.0 Amps, 20 Volts | |
NTMD6N02R2_05 | ONSEMI |
获取价格 |
Power MOSFET 6.0 Amps, 20 Volts | |
NTMD6N02R2G | ONSEMI |
获取价格 |
Power MOSFET 6.0 Amps, 20 Volts | |
NTMD6N03R2 | ONSEMI |
获取价格 |
Power MOSFET |