Datasheet > IRF7402UTRPBF

IRF7402UTRPBF

更新时间： 2024-11-19 19:34:15

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	223K
描述
Power Field-Effect Transistor, 6.8A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

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IRF7402UTRPBF 数据手册

PD - 96071A

IRF7402UPbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel MOSFET

l Very Small SOIC Package

l Low Profile (<1.1mm)

l Available in Tape & Reel

l Fast Switching

V_DSS= 20V

R_DS(on)= 0.035Ω

l Lead-Free

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Description

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

siliconarea.Thisbenefit,combinedwiththefastswitching

speed and ruggedized device design that HEXFET

power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characterstics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared or wave soldering techniques.

Power dissipation of greater than 0.8 W is possible in a

typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

6.8

5.4

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

V_GS

Gate-to-Source Voltage

± 12

dv/dt

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

V/ns

°C

T_J,T_STG

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

09/14/06

12 3 4 5 6 7 8

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