Datasheet > IRF7401TR

IRF7401TR

更新时间： 2024-11-20 17:15:03

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	403K
描述
种类:N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时）:10A;Vgs(th)(V):±12;漏源导通电阻:mΩ@10V;漏源导通电阻:22mΩ@4.5V

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IRF7401TR 数据手册

UMW

IRF7401

N-Channel MOSFET

Features

VDS (V) = 20V

RDS(ON)

22 m

(VGS = 4.5V)

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

SOP-8

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally

Increased Reliability

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ 4.5V

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

8.7

7.0

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

Gate-to-Source Voltage

± 12

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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