Datasheet > HGTG30N60A4D

HGTG30N60A4D

更新时间： 2024-09-30 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管开关晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
9页	103K
描述
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG30N60A4D 数据手册

HGTG30N60A4D

Data Sheet

January 2000

File Number 4830

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

Features

• >100kHz Operation At 390V, 30A

• 200kHz Operation At 390V, 18A

• 600V Switching SOA Capability

The HGTG30N60A4D is a MOS gated high voltage

switching devices combining the best features of MOSFETs

and bipolar transistors. This device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at T = 125 C

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C. The

IGBT used is the development type TA49343. The diode

used in anti-parallel is the development type TA49373.

• Temperature Compensating SABER Model

www.intersil.com

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

Packaging

JEDEC STYLE TO-247

Formerly Developmental Type TA49345.

Ordering Information

PART NUMBER

PACKAGE

BRAND

30N60A4D

COLLECTOR

(FLANGE)

HGTG30N60A4D

TO-247

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5 6 7...9

中文翻译

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HGTG30N60A4D 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG30N60A4D相关器件

型号	品牌	获取价格	描述	数据表
HGTG30N60A4D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 P
HGTG30N60B3	FAIRCHILD	获取价格	60A, 600V, UFS Series N-Channel IGBT
HGTG30N60B3	INTERSIL	获取价格	60A, 600V, UFS Series N-Channel IGBT
HGTG30N60B3	ONSEMI	获取价格	IGBT，600V，PT
HGTG30N60B3D	FAIRCHILD	获取价格	60A, 600V, UFS Series N-Channel IGBT
HGTG30N60B3D	INTERSIL	获取价格	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG30N60B3D	ONSEMI	获取价格	600V，PT IGBT
HGTG30N60B3D_04	FAIRCHILD	获取价格	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG30N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 P
HGTG30N60C3	INTERSIL	获取价格	63A, 600V, UFS Series N-Channel IGBT

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