Datasheet > 晶体管 > IGBT> HGTG30N60B3D

HGTG30N60B3D

更新时间： 2024-09-16 22:51:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率控制瞄准线双极性晶体管局域网
页数	文件大小	规格书
8页	210K
描述
60A, 600V, UFS Series N-Channel IGBT

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中文翻译

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数据手册
替代型号

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HGTG30N60B3D 数据手册

HGTG30N60B3D, HGT4E30N60B3DS

Data Sheet

December 2001

60A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Packaging

JEDEC STYLE TO-247

The HGTG30N60B3D, and HGT4E30N60B3DS are MOS

gated high voltage switching devices combining the best

features of MOSFETs and bipolar transistors. These devices

have the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

25 C and 150 C. The IGBT used is the development type

TA49170. The diode used in anti-parallel with the IGBT is the

development type TA49053.

TO-268AA

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49172.

Ordering Information

PART NUMBER

PACKAGE

TO-247

TO-268AA

BRAND

G30N60B3D

HGTG30N60B3D

Symbol

HGT4E30N60B3DS

NOTE: When ordering, use the entire part number.

Features

• 60A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

12 3 4 5 6 7 8

中文翻译

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HGTG30N60B3D 替代型号

型号	品牌	替代类型	描述	数据表
STGW35HF60WD	STMICROELECTRONICS	功能相似	35 A, 600 V ultra fast IGBT
STGW30NC60WD	STMICROELECTRONICS	功能相似	N-CHANNEL 30A - 600V - TO-247 Ultra FAST Swit
STGW20NC60VD	STMICROELECTRONICS	功能相似	N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT

与HGTG30N60B3D相关器件

型号	品牌	获取价格	描述	数据表
HGTG30N60B3D_04	FAIRCHILD	获取价格	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG30N60B3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 P
HGTG30N60C3	INTERSIL	获取价格	63A, 600V, UFS Series N-Channel IGBT
HGTG30N60C3D	HARRIS	获取价格	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG30N60C3D	ROCHESTER	获取价格	63A, 600V, N-CHANNEL IGBT, TO-247
HGTG30N60C3D	INTERSIL	获取价格	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTG30N60C3D	FAIRCHILD	获取价格	63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTG30N60C3D	ONSEMI	获取价格	600V, PT IGBT
HGTG30N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG30N60C3D_NL	ROCHESTER	获取价格	63A, 600V, N-CHANNEL IGBT, TO-247

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